Erciyes University - Info Package

Course unit title	Level of course unit	Course unit code	Type of course unit	Semester of course unit	Local credit	ECTS credit	Syllabus
METAL-SEMICONDUCTOR CONTACTS	Second cycle	FİZ 694		2	7.50	7.50	Print

Description of course unit

Prerequisites and course requisities	Semiconductor Physics
Language of instruction	Turkish
Coordinator	PROF. DR. ENİSE AYYILDIZ
Lecturer(s)	PROF. DR. ENİSE AYYILDIZ
Teaching assitant(s)	None
Mode of delivery	Face to facew
Course objective	The aim of this course is to give the knowledge about the formation mechanisms of the metal-semiconductor contacts, their electrical characteristics and technological significance.
Course description	The formation of a Schottky barrier, methods of measurement of barrier height, current-transport mechanisms, the capacitance of a Schottky barrier, methods of manufacture, the effect of pressure and heat treatment on contacts.

Course contents

1	Surfaces, interfaces and Schottky barriers
2	The formation of a Schottky barrier
3	Methods of measurement of barrier heights
4	Metal contacts on silicon and germanium; etched and oxidized silicon surfaces
5	Metal contacts on III-V semiconductors; gallium arsenide (GaAs) and indium phosphide (InP)
6	Current-transport mechanisms; thermionic emission theory, diffusion theory
7	Current-transport mechanisms;recombination in the depletion region, tunnelling through the barrier
8	Reverse characteristics, transient effect
9	The capacitance of a Schottky barrier, C/V methods of measuring dopant distributions
10	Methods of manufacture; point contacts, evaporated contacts, sputtered contacts, chemical deposition
11	Oxidation of silicon and III-V compound semiconductors
12	Surface passivation by adsorbates and surfactans
13	Laterally inhomogeneous Schottky contacts
14	Temperature and high-pressure effects on the electrical characteristics
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Learning outcomes of the course unit

1	Understand mechanisms of barrier formation in metal-semiconductor contacts
2	Identify and explain the difference between an ohmic and rectifying contact.
3	Describe the role of interfacial microstructure in contact performance and reliability.
4	Discusses the current-transport mechanisms at metal-semiconductor contacts.
5	Determine the characteristic diode parameters.
6	Understand the important of metal-semiconductor contacts in the technology.
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10

*Contribution level of the course unit to the key learning outcomes

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Number of stars refer to level of contribution from 1 (the least) to 5 (the most)

Planned learning activities, teaching methods and ECTS work load

	Quantity	Time (hour)	Quantity*Time (hour)
Lectures (face to face teaching)	14	3	42
Study hours out of classroom (study before and after the class)	14	2	28
Homework	7	5	35
Presentation / seminar	1	10	10
Quiz	0	0	0
Preparation for midterm exams	1	20	20
Midterm exams	1	2	2
Project (term paper)	1	20	20
Laboratuar	0	0	0
Field study	0	0	0
Preparation for final exam	1	25	25
Final exam	1	2	2
Research	0	0	0
Total work load			184
ECTS			7.50

Assessment methods and criteria

Evaluation during semester	Quantity	Percentage
Midterm exam	2	65
Quiz	0	0
Homework	7	35
Semester total		100
Contribution ratio of evaluation during semester to success		40
Contribution ratio of final exam to success		60
General total		100

Recommended and required reading

Textbook	1. Rhoderick, E. H., Williams,R. H., Metal-Semiconductor Contacts, Clarendon Press, Oxford, 1988. 2. Brillson, L. J, Contacts to Semiconductors, Noyes publications, New York, 1993.
Additional references	1. Mönch, W., Semiconductor Surface and Interface, Springer, Berlin, 2001. 2. Sze,S. M.,Ng, K. K., Physics of Semiconductor Devices , John Wiley&Sons, NewJersey, 2007.

Files related to the course unit